收藏本站
IXKC 25N80C
CoolMOS ? 1) Power MOSFET
ISOPLUS TM Package
N-Channel Enhancement Mode
Low R DSon , high V DSS MOSFET
I D25 = 25 A
V DSS = 800 V
R DS(on) max = 150 m Ω
Electrically Isolated Back Surface
G
D
ISOPLUS220
G
D
S
E72873
S
isolated
back surface
MOSFET
Features
Symbol
V DSS
Conditions
T VJ = 25°C
Maximum Ratings
800 V
? Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
V GS
± 20
V
- isolated mounting surface
I D25
I D90
E AS
E AR
dV/dt
T C = 25°C
T C = 90°C
T J start = 25°C; single pulse; I D = 3.4 A
T J start = 25°C; repetitive; I D = 17 A
V DS < V DSS ; I F = 35 A; T VJ = 150°C
d IR /dt = 100 A/μs
25
18
670
0.5
6
A
A
mJ
mJ
V/ns
- 2500 V electrical isolation
? 3 rd generation CoolMOS ? 1) power
MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
? Low thermal resistance due to
reduced chip thickness
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise speci?ed)
? Low drain to tab capacitance (<30 pF)
Applications
min.
typ.
max.
? Switched mode power supplies (SMPS)
R DSon
V GS(th)
I DSS
V GS = 10 V; I D = I D90
V DS = V GS ; I D = 2 mA
V DS = V DSS ; V GS = 0 V
T VJ = 25°C
2
135
150
4
50
m Ω
V
μA
? Uninterruptible power supplies (UPS)
? Power factor correction (PFC)
? Welding
? Inductive heating
I GSS
V GS = ± 20 V; V DS = 0 V
T VJ = 125°C
250
±200
μA
nA
Advantages
? Easy assembly: no screws or isolation
C iss
4600
pF
foils required
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V; V DS = 25 V; f = 1 MHz
V GS = 0 to 10 V; V DS = 640 V; I D = I D90
2500
120
180
20
80
pF
pF
nC
nC
nC
? Space savings
? High power density
t d(on)
t r
t d(off)
V GS = 10 V; V DS = 640 V; T VJ = 125°C
I D = 35 A; R G = 2.2 Ω
25
25
75
ns
ns
ns
1)
CoolMOS ? is a trademark of
In?neon Technologies AG.
t f
R thJC
IXYS reserves the right to change limits, test conditions and dimensions.
? 2008 IXYS All rights reserved
10
0.5
ns
K/W
20080526a
1-4
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXKC40N60C MOSFET N-CH 600V 28A ISOPLUS220
IXKF40N60SCD1 MOSFET N-CH 600V 38A I4-PAC-5
IXKG25N80C MOSFET N-CH 800V 25A ISO264
IXKH20N60C5 MOSFET N-CH 600V 20A TO-247AD
IXKH24N60C5 MOSFET N-CH 600V 24A TO247AD
IXKH30N60C5 MOSFET N-CH 600V 30A TO247AD
IXKH35N60C5 MOSFET N-CH 600V 35A TO247AD
IXKH47N60C MOSFET N-CH 600V 47A TO-247
相关代理商/技术参数
IXKC40N60C 功能描述:MOSFET 28 Amps 600V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKF40N60SCD1 功能描述:MOSFET 40 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKG25N80C 功能描述:MOSFET 25 Amps 800V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKH20N60C5 功能描述:MOSFET 20 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKH24N60C5 功能描述:MOSFET 24 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKH30N60C5 功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKH35N60C5 功能描述:MOSFET 35 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXKH47N60C 功能描述:MOSFET 47 Amps 600V 70 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube